本論文研究a-cut及c-cut摻釹釔釩酸雷射在被半導體雷射泵浦之下所產生之被動Q開關於激發光束與共振腔組態下的影響，實驗上我們觀察激發光束大小以及改變共振腔組態下對平均輸出功率、脈衝週期、脈衝寬度等Q開關脈衝變化之情形。研究中發現較大的激發光束光點有利於Q開關。幾何穩定腔邊緣附近會發現被動Q開關被壓抑及增強的效應。我們也發現c-cut比a-cut更適合當增益介質在產生短脈衝、高峰值功率且穩定的Q開關脈衝。根據這些研究，c-cut摻釹釔釩酸晶體在泵浦功率890mW下，可以產生短到26ns的脈寬，以及高達150W的峰值功率。 In this thesis, we experimentally study pump and cavity effects in passive Q switching of diode-pumped a-cut and c-cut Nd:YVO4 lasers. The average output power, pulse width, and period were measured as functions of the pump spot size and resonator configuration. Our investigation shows that larger pump spot size is favorable for good Q switching. Suppression and enhancement effects on passive Q switching were observed near the border of geometrically stable resonator figuration. We also find that c-cut Nd:YVO4 crystal is a more preferable gain medium than a-cut one for generating short pulse width, high peak power, and stable Q-switched pulses. Based on these studies, the generation of Q-switched pulses with pulse width as short as 26 ns and peak power up to 150 W were achieved by use of a c-cut Nd:YVO4 crystal under pump power of 890mW.
