本論文中，利用溶膠-凝膠法製備添加奈米銀線(AgNWs)或多壁奈米碳管(MWCNTs)之氧化鋅(ZnO)薄膜，觀察其表面性質、透明隔熱性質、介電性質的變化。結果發現AgNWs或MWCNTs的添加量對於不同濃度的ZnO薄膜之性質有顯著的影響。 薄膜於200 ℃乾燥10分鐘，在空氣下經275 ℃燒結2.5小時。結果發現，未添加前的ZnO薄膜，其表面平均粗糙度(Ra)、近紅外線遮蔽率，由ZnO濃度從0.5?0.9 M，隨之增加，0.5 M ZnO薄膜有最小Ra值33.24 nm，近紅外線遮蔽率皆在10 %以下，而可見光穿透率隨ZnO濃度下降而下降，可見光穿透率皆達80 %以上。 添加AgNWs後，平均粗糙度、近紅外線遮蔽率，其變化趨勢隨ZnO濃度和添加量增加而增加，平均粗糙度比未添加前大，當添加莫耳比值為1/50的AgNWs於0.5 M ZnO薄膜，有最小Ra值42.88 nm，近紅外線遮蔽率的範圍約10?40 %，可見光穿透率隨ZnO濃度和添加量增加而下降，其值範圍約40?90 %。 添加MWCNTs後，平均粗糙度、近紅外線遮蔽率，其變化趨勢隨ZnO濃度和添加量增加而增加，平均粗糙度比添加AgNWs後小，當添加莫耳比值為1/50的MWCNTs於0.5 M ZnO薄膜，有最小Ra值30.94 nm，近紅外線遮蔽率的範圍約在15?95 %，可見光穿透率隨ZnO濃度和添加量增加而下降，其值範圍約5?85 %。 於室溫，在10 MHz頻率下的介電常數與介電損失，介電常數隨ZnO濃度增加而增加，而介電損失隨之下降，0.9 M的ZnO薄膜有最大的介電常數值1564.82，最低的介電損失值0.86。 當AgNWs的添加莫耳比值降為1/50時，才開始有顯著的介電常數，隨著ZnO濃度上升而提高，當添加莫耳比值為1/50的AgNWs於0.9 M ZnO薄膜，有最大的介電常數值1010.3；介電損失則隨之下降，當添加莫耳比值為1/50的AgNWs於0.9 M ZnO薄膜，有最低的介電損失值2.26。 添加MWCNTs後的介電常數，隨著ZnO濃度提高，都有上升的趨勢，當添加莫耳比值為1/10的MWCNTs於0.9 M ZnO薄膜有其最大的介電常數值4017.21，介電損失在ZnO濃度為0.9M時，當添加莫耳比值為1/10的MWCNTs於0.9 M ZnO薄膜有最低的介電損失值0.93。 In this study, we reported on the micro-structural, transparent and heat shielding, and dielectric properties of AgNWs-doped and MWCNTs-doped ZnO thin films prepared by sol-gel method. The doping amounts of AgNWs or MWCNTs have strong influence on the properties of the ZnO thin films. The thin films were dried at a constant temperature of 200 ℃ for 10 minutes and then sintered at a constant temperature of 275 ℃ for 2.5 hours. As the concentration of undoped ZnO thin films increases from 0.5 M to 0.9 M, the surface average roughness (Ra) and the NIR shielding increase, but the visible transparency decreases. The 0.5 M undoped ZnO film exhibits the lowest Ra of 33.24 nm. All the undoped ZnO thin films exhibit the NIR shielding below 10 % and exhibit the visible transparency above 80 %. As the doping amounts of AgNWs and the concentrations of ZnO films increase, the Ra and the NIR shielding increase, but the visible transparency decreases. The 0.5 M ZnO thin film doped with molar ratio of 1/50 of AgNWs exhibits the lowest Ra of 42.88 nm. The AgNWs-doped ZnO thin films exhibit the NIR shielding in the range of 10-40 % and the visible transparency in the range of 40-90 %. As the doping amounts of MWCNTs and the concentrations of ZnO films increase, the Ra and the NIR shielding increase, but the visible transparency decreases. The 0.5 M ZnO thin film doped with molar ratio of 1/50 of MWCNTs exhibits the lowest Ra of 30.94 nm. The MWCNTs-doped ZnO thin films exhibit the NIR shielding in the range of 15-95 % and the visible transparency in the range of 5-85 %. The dielectric constant increases and the dielectric loss decreases with increasing undoped ZnO concentration up to 0.9 M at room temperature. The undoped 0.9 M ZnO thin film exhibits the largest dielectric constant of 1564.82 and the lowest dielectric loss of 0.86 at 10 MHz. The 0.9 M ZnO thin film doped with molar ratio of 1/50 of AgNWs exhibits the highest dielectric constant of 1010.3 and the lowest dielectric loss of 2.26. The 0.9 M ZnO thin film doped with molar ratio of 1/10 of MWCNTs exhibits the highest dielectric constant of 4017.21 and the lowest dielectric loss of 0.93.
