Multi-level operation of fully CMOS compatible WOX resistive random access memory (RRAM)

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Title:	Multi-level operation of fully CMOS compatible WOX resistive random access memory (RRAM)
Authors:	Chien, W.C.,?Chen, Y.C.,?Chang, K.P.,?Lai, E.K.,?Yao, Y.D.,?Lin, P.,?Gong, J.,?Tsai, S.C.,?Hsieh, S.H.,?Chen, C.F.,?Hsieh, K.Y.,?Liu, R.,?Lu, C.-Y.
Contributors:	Department of Electrical Engineering, Tunghai University
Keywords:	MLC;Program verify algorithm;Reliability;Resistive random access memory;RRAM;Tungsten oxide
Date:	2009-05-10
Issue Date:	2013-05-15T09:04:28Z (UTC)
Abstract:	The multi-level operation of WOX based RRAM has been investigated. Improvement of our WOX process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention, robust read disturb immunity and initial cycling endurance of >1,000 times have been demonstrated. ?2009 IEEE.
Relation:	2009 IEEE International Memory Workshop, IMW '09 , art. no. 5090599
Appears in Collections:	[電機工程學系所] 會議論文

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