The improvement of on-state resistance with partially slotted STI (Shallow Trench Isolation) for medium voltage power devices in an advanced 0.25um BiCMOS-DMOS process is implemented. Experiment results show that our proposed device can reduce 20% R on without hurting breakdown voltage. The partially slotted STI structure avoids breakdown voltage to decrease and also shortens the drain current path due to a 3-dimentional electric field shaping. Careful design for slotted STI profile is needed to achieve the optimum R on-BV tradeoff performance. ? 2008 IEEE.
Relation:
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT , art. no. 4734498 , pp. 199-202
