The device characteristics of partially undoped poly-silicon gate P-LDMOS power transistors

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题名:	The device characteristics of partially undoped poly-silicon gate P-LDMOS power transistors
作者:	Su, R.Y., Chiang, P.Y., Gong, J., Tsai, J.L., Huang, T.Y., Liu, M., Chou, C.C.
贡献者:	Department of Electrical Engineering, Tunghai University
关键词:	Civil aviation;Electric network analysis;Electronics industry;Hot carriers;Integrated circuits;Leakage currents;MOS devices;MOSFET devices;Nonmetals;Polysilicon;Power electronics;Quality assurance;Reliability;Safety factor;Semiconducting silicon;Silicon;Standards;Sulfate minerals;Technical presentations;Transistors
日期:	2008-07-07
上传时间:	2013-05-15T09:04:35Z (UTC)
出版者:	Singapore; Singapore
摘要:	The effect of partially undoped poly-silicon gate above the drift region in P-Lateral Double-Diffused MOS (P-LDMOS) Transistors is investigated. Experiment results show that it can improve the off-state leakage current and reduce the on-state resistance. For hot carrier performance, this structure induces a higher initial current shift due to less vertical field. The long-term hot carrier degradation behavior of this device is the same as that of the standard devices.
關聯:	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA , art. no. 4588212
显示于类别:	[電機工程學系所] 會議論文

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