A highly stackable Thin-Film Transistor (TFT) NAND-type flash memory

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题名:	A highly stackable Thin-Film Transistor (TFT) NAND-type flash memory
作者:	Lai, E.-K.,?Lue, H.-T.,?Hsiao, Y.-H.,?Hsieh, J.-Y.,?Lee, S.-C.,?Lu, C.-P.,?Wang, S.-Y.,?Yang, L.-W.,?Chen, K.-C.,?Gong, J.,?Hsieh, K.-Y.,?Ku, J.,?Liu, R.,?Lu, C.-Y.
贡献者:	Department of Electrical Engineering, Tunghai University
关键词:	Energy gap;Flash memory;NAND circuits;Polysilicon
日期:	2006
上传时间:	2013-05-15T09:04:56Z (UTC)
摘要:	For the first time, a successful TFT NAND-type Flash memory is demonstrated using a low thermal budget process suitable for stacking the memories. A TFT-SONOS device using bandgap engineered SONOS (BE-SONOS) [1] with fully-depleted (FD) poly silicon (50 nm) channel and tri-gate P +-poly gate is integrated into a NAND array. Small devices (LAV=O. 18/0.09 um) with good DC performance are achieved, owing to the good control capability of the tri-gate FD structure. Successful NAND array functions are demonstrated, with more than 1 μA read current for a 16-string NAND array and good program disturb immunity. This new device also shows good endurance and data retention, and negligible read disturb. These results are very encouraging for future 3D Flash memory. ? 2006 IEEE.
關聯:	Digest of Technical Papers - Symposium on VLSI Technology , art. no. 1705209 , pp. 46-47
显示于类别:	[電機工程學系所] 會議論文

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