The effect of self-heating in LDMOSFET expansion regime

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Please use this identifier to cite or link to this item: http://140.128.103.80:8080/handle/310901/21790

Title:	The effect of self-heating in LDMOSFET expansion regime
Authors:	Chou, H.-L., Ng, J.C.W., Liou, R.-H., Jong, Y.-C., Tuan, H.-C., Huang, C.-F., Gong, J.
Contributors:	Department of Electrical Engineering, Tunghai University
Keywords:	Current enhancement;expansion regime;impact ionization;isothermal simulation;Kirk effect;LDMOS;nonisothermal simulation;reduced surface field (RESURF);self-heating;thermal effect
Date:	2012
Issue Date:	2013-05-15T09:05:52Z (UTC)
Relation:	IEEE Transactions on Electron Devices 59 (11) , art. no. 6307837 , pp. 3042-3047
Appears in Collections:	[電機工程學系所] 期刊論文

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