This paper presents the parameter extraction including the field-plate effect of a 0.25 νm 12 V lateral diffused metal-oxide-semiconductor field effect transistor (LDMOSFET). As LDMOSFET is capable of sustaining high-voltage signals between source and drain, it is appropriately used for power and radio frequency (RF) IC applications. For RF applications, a complete parameter extraction including the parasitic components of the devices used is necessary for accurately predicting the performance of the circuits. In this study, we propose a method to extract the parameters of the small-signal equivalent model containing the field-plate capacitance (C fp) of a LDMOSFET. The simulated results of this LDMOSFET RF small-signal model agree well with the measured results from 0.5 to 3 GHz. The extracted parameters show that the C fpforms an additional signal path which degrades the effective drain-side resistance and should be considered in RF applications. ? 2012 IOP Publishing Ltd.
Relation:
Semiconductor Science and Technology 27 (1) , art. no. 015017
