An octagonal dual-gate transistor with enhanced and adaptable low-frequency noise

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题名:	An octagonal dual-gate transistor with enhanced and adaptable low-frequency noise
作者:	Chiu, T.-J., Gong, J., King, Y.-C., Lu, C.-C., Chen, H.
贡献者:	Department of Electrical Engineering, Tunghai University
关键词:	Dual-gate transistor;low-frequency noise;noise adaptability;shallow trench isolation (STI)
日期:	2011
上传时间:	2013-05-15T09:06:47Z (UTC)
摘要:	As the low-frequency noise of a transistor grows nonnegligible in advanced technologies, the possibility of using noise for computation is becoming an alternative, receiving more and more attention. The ability to control the noise level would further enrich the flexibility of the circuit design. Therefore, this letter presents a dual-gate field-effect transistor in an octagonal shape. By changing the voltage of an extra gate above the shallow trench isolation, the transistor is able to adapt its low-frequency noise over several decades and in a power-efficient manner. The octagonal geometry further makes sufficient a voltage range from 0 to 5 V for the noise adaptation. Moreover, the transistor is fabricated with the standard CMOS logic process without additional masks. All the features underpin the development of large-scale noisy computation in integrated circuits. ? 2010 IEEE.
關聯:	IEEE Electron Device Letters 32 (1) , art. no. 5654532 , pp. 9-11
显示于类别:	[電機工程學系所] 期刊論文

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