LDMOSFET with dielectric modulated drift region

THUIR > College of Engineering > Department of Electrical Engineering > Periodical Articles > Item 310901/21865

Please use this identifier to cite or link to this item: http://140.128.103.80:8080/handle/310901/21865

Title:	LDMOSFET with dielectric modulated drift region
Authors:	Su, R.Y., Chiang, P.Y., Gong, J.
Contributors:	Department of Electrical Engineering, Tunghai University
Keywords:	Breakdown voltage;Drift regions;Electric field distributions;LDMOSFET;On-resistance
Date:	2010
Issue Date:	2013-05-15T09:06:57Z (UTC)
Abstract:	The properties of LDMOSFETs with dielectric material (several pieces of STI) being inserted into the drift region of the transistor to modulate the one-dimensional electric field distribution are demonstrated. Although this structure increases the turn-on resistance slightly, it also increases the breakdown voltage (BV) by a larger percentage. Systematic experimental results verify that the breakdown voltage of this device can be tuned by varying the dielectric width. ? 2010 The Institution of Engineering and Technology.
Relation:	Electronics Letters 46 (6) , pp. 447-448
Appears in Collections:	[Department of Electrical Engineering ] Periodical Articles

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