This article presents comprehensive methods for the design of a wideband CMOS transmit/receive (T/R) switch. Techniques such as RF floated body to extend the bandwidth and decrease the insertion loss (IL), and stacking architecture with high substrate isolation to enhance the power-handling capability, are used for the design of a T/R switch on a standard 0.18-m triple-well process. The measured performance of the T/R switch demonstrates the effectiveness of the methods presented in this article such that IL less than 1.28dB, isolation higher than 24dB, and input 1dB compression point of 27 dBm can be achieved from 2 to 5.8GHz.
Relation:
International Journal of Electronics 96 (9) , pp. 989-1003
