Temperature effect of metal-oxide-semiconductor field-effect-transistors' gate current evaluated with the mask dimensions

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题名:	Temperature effect of metal-oxide-semiconductor field-effect-transistors' gate current evaluated with the mask dimensions
作者:	Yeh, C.-C., Neih, C.-F., Chen, Y.-Y., Gong, J.
贡献者:	Department of Electrical Engineering, Tunghai University
关键词:	Direct tunneling current;Edge direct tunneling (EDT);Gate leakage current;Modeling;Source-drain extension;Ultra-thin gate oxide
日期:	2007
上传时间:	2013-05-15T09:08:01Z (UTC)
摘要:	Gate dielectric leakage current becomes a serious concern as the gate oxide thickness of metal-oxide-semiconductor field-effect-transistors is less than 3 nm. This thin oxide can conduct significant leakage current by various tunneling mechanisms and degrade circuit performance. A mathematical method of modeling the gate leakage current IG is presented in this work. Both the shallow trench isolation effect and the source-drain extension effect on IG are included. With suitably chosen transistor dimensions, the parameter extraction can be performed using the devices' mask drawn size, and the troublesome effective device length and width are not necessary in this model. The extracted parameters and their temperature dependence were used to predict IG of devices with other different dimensions. ? 2007 Elsevier Ltd. All rights reserved.
關聯:	Solid-State Electronics 52 (2) , pp. 215-220
显示于类别:	[電機工程學系所] 期刊論文

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