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Please use this identifier to cite or link to this item:
http://140.128.103.80:8080/handle/310901/21966
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| Title: | Effects of germanium and carbon coimplants on phosphorus diffusion in silicon |
| Authors: | Ku, K.C.?,?Nieh, C.F.,?Gong, J.,?Huang, L.P.,?Sheu, Y.M.,?Wang, C.C.,?Chen, C.H.,?Chang, H.,?Wang, L.T.,?Lee, T.L.,?Chen, S.C.,?Liang, M.S. |
| Contributors: | Department of Electrical Engineering, Tunghai University |
| Keywords: | Carbon;Computer simulation;Crystalline materials;Defects;Diffusion;Electron traps;Germanium;Monte Carlo methods;Reduction;Silicon |
| Date: | 2006 |
| Issue Date: | 2013-05-15T09:08:23Z (UTC)
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| Abstract: | The authors have studied the interactions between implant defects and phosphorus diffusion in crystalline silicon. Defect engineering enables ultrashallow n +/p junction formation using phosphorus, carbon, and germanium coimplants, and spike anneal. Their experimental data suggest that the positioning of a preamorphized layer using germanium implants plays an important role in phosphorus diffusion. They find that extending the overlap of germanium preamorphization and carbon profiles results in greater reduction of phosphorus transient-enhanced diffusion by trapping more excess interstitials. This conclusion is consistent with the end-of-range defects calculated by Monte Carlo simulation and annealed carbon profiles. ? 2006 American Institute of Physics. |
| Relation: | Applied Physics Letters 89 (11) , art. no. 112104 |
| Appears in Collections: | [電機工程學系所] 期刊論文
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