Effects of germanium and carbon coimplants on phosphorus diffusion in silicon

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題名:	Effects of germanium and carbon coimplants on phosphorus diffusion in silicon
作者:	Ku, K.C.?,?Nieh, C.F.,?Gong, J.,?Huang, L.P.,?Sheu, Y.M.,?Wang, C.C.,?Chen, C.H.,?Chang, H.,?Wang, L.T.,?Lee, T.L.,?Chen, S.C.,?Liang, M.S.
貢獻者:	Department of Electrical Engineering, Tunghai University
關鍵詞:	Carbon;Computer simulation;Crystalline materials;Defects;Diffusion;Electron traps;Germanium;Monte Carlo methods;Reduction;Silicon
日期:	2006
上傳時間:	2013-05-15T09:08:23Z (UTC)
摘要:	The authors have studied the interactions between implant defects and phosphorus diffusion in crystalline silicon. Defect engineering enables ultrashallow n +/p junction formation using phosphorus, carbon, and germanium coimplants, and spike anneal. Their experimental data suggest that the positioning of a preamorphized layer using germanium implants plays an important role in phosphorus diffusion. They find that extending the overlap of germanium preamorphization and carbon profiles results in greater reduction of phosphorus transient-enhanced diffusion by trapping more excess interstitials. This conclusion is consistent with the end-of-range defects calculated by Monte Carlo simulation and annealed carbon profiles. ? 2006 American Institute of Physics.
關聯:	Applied Physics Letters 89 (11) , art. no. 112104
顯示於類別:	[電機工程學系所] 期刊論文

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