Hot-Carrier Degradation Rate of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors under Maximum Substrate Current Stress Conditions

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Title:	Hot-Carrier Degradation Rate of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors under Maximum Substrate Current Stress Conditions
Authors:	Chen, S.-H., Gong, J., Wu, M.-C., Su, A.Y.-K.
Contributors:	Department of Electrical Engineering, Tunghai University
Keywords:	Degradation rate;High voltage;Hot carrier;Impact Ionization;LDMOSFET
Date:	2004
Issue Date:	2013-05-15T09:09:03Z (UTC)
Abstract:	In this study, hot-carrier stresses in high-voltage (HV) lateral diffused metal-oxide-semiconductor field-effect transistors (LDMOSFETs) are applied under maximum substrate current (I Sub,max) conditions with different V DS and V GS. The power index of the hot-carrier degradation rates is not always 0.5 upon stressing under different I Sub,max conditions, and the HV LDMOSFETs do not exhibit the hot-carrier degradation behavior observed in low-voltage (LV) metal-oxide-semiconductor field-effect transistors (MOSFETs). In order to explain why the degradation rates under I Sub,max conditions differ with different biases, two-dimensional simulators are used to elucidate the degradation mechanism in HV LDMOSFETs. It is found that under different I Sub,max conditions, the highest impact ionization is located at different positions in the drift region of the device. Due to the different gate-control abilities of these regions, the current densities affected by the hot-carrier-induced interface-trapped charges are different. Thus the hot-carrier degradation rates also differ. Furthermore, due to the different depths of the impact ionization region, the amounts of initial hot-carrier-induced interface-trapped charges differ and thus the power-law pre-coefficient A also differs.
Relation:	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers Volume 43, Issue 1, January 2004, Pages 54-60
Appears in Collections:	[電機工程學系所] 期刊論文

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