Thickness dependent reactivity and coercivity for ultrathin Co/Si(111) films

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題名:	Thickness dependent reactivity and coercivity for ultrathin Co/Si(111) films
作者:	Chuang, C., Chang, W.Y., Chen, W.H., Tsay, J.S., Su, W.B., Chang, H.W., Yao, Y.D.
貢獻者:	Department of Physics, Tunghai University
關鍵詞:	Adsorption kinetics;Chemical state;CO coverage;Diffusion length;Films thinner;Oxygen atom;Oxygen exposure;Oxygen influence;Si (1 1 1);Solid surface;Sputtering rate;Ultra-thin
日期:	2011
上傳時間:	2013-05-15T09:09:17Z (UTC)
摘要:	For Co/Si(111) films thinner than 15 ML, the thickness dependent reactivity and magnetic properties have been systematically studied. As the Co coverage increases, Co adatoms on the Si(111) surface show enhanced chemical reactivity for oxidation due to the change of the chemical state. After the saturation oxygen exposure, oxygen atoms interact with a thick Co layer to form a rougher interface. Complex adsorption kinetics of oxygen in the Co layer is observed. From the depth-profiling measurements for Co layers close to the Co-Si interface, the sputtering rate is enhanced due to that the solid surfaces of Si and Co-Si compounds are resistive against oxidation. The descending of the Kerr intensity by saturation oxygen exposure shows the limited diffusion length of oxygen atoms into the films. The inertness of the Co-Si interface, the reduction of pure cobalt and imperfection introduced by oxygen influence the coercivity of O/Co/Si(111). ? 2011 Elsevier B.V. All rights reserved.
關聯:	Thin Solid Films 519 (23) , pp. 8371-8374
顯示於類別:	[應用物理學系所] 期刊論文

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