High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

Tunghai University Institutional Repository > 工學院 > 電機工程學系所 > 期刊論文 > Item 310901/22014

Please use this identifier to cite or link to this item: http://140.128.103.80:8080/handle/310901/22014

Title:	High detectivity InGaN-GaN multiquantum well p-n junction photodiodes
Authors:	Chiou, Y.-Z.a, Su, Y.-K.a, Chang, S.-J.a, Gong, J.b, Lin, Y.-C.a, Liu, S.-H.a, Chang, C.-S.a
Contributors:	Department of Electrical Engineering, Tunghai University
Keywords:	1/f;GaN;Multiquantum well (MQW);Noise;P-n junction;Photodiode
Date:	2003
Issue Date:	2013-05-15T09:09:17Z (UTC)
Abstract:	InGaN-GaN multiquantum well (MQW) p-n junction photodiodes with semi-transparent Ni-Au electrodes were fabricated and characterized. It was found that the fabricated InGaN-GaN p-n junction photodiodes exhibit a 20-V breakdown voltage and a photocurrent to dark current contrast ratio of ∼ 105 when a 0.4-V reverse bias was applied. The peak responsivity at 380 nm was 1.28 and 1.76 A/W with a 0.1- and 3-V applied reverse bias, respectively. Furthermore, an internal gain was found from our InGaN-GaN MQW p-n junction photodiodes possibly due to the long-lifetime of GaN based materials. Also, it was found that the low frequency noise of our photodiodes was dominated by the 1/f type noise. For a given bandwidth of 500 Hz, the corresponding noise equivalent power and normalized detectivity D* were found to be 6.34 × 10-13 W and 4.45 × 1011 cm · Hz0.5 W-1, respectively.
Relation:	IEEE Journal of Quantum Electronics Volume 39, Issue 5, May 2003, Pages 681-685
Appears in Collections:	[電機工程學系所] 期刊論文

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	149	View/Open