Hot carrier degradation in deep sub-micron nitride spacer lightly doped drain N-channel metal-oxide-semiconductor transistors

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题名:	Hot carrier degradation in deep sub-micron nitride spacer lightly doped drain N-channel metal-oxide-semiconductor transistors
作者:	Tsai, J.-L.a, Huang, K.-Y.a, Lai, J.-H.b, Gong, J.a, Yang, F.-J.b, Lin, S.-Y.a
贡献者:	Department of Electrical Engineering, Tunghai University
关键词:	Electron trapping;Hot carrier degradation;Interfacial states;Multi-stage degradation;Nitride spacer;Self-limit hot carrier degradation;Spacer bottom oxide
日期:	2002
上传时间:	2013-05-15T09:09:45Z (UTC)
摘要:	Spacer bottom oxide in the nitride spacer lightly doped drain (LDD) device, which is used to prevent huge interfacial states between the nitride and silicon interface, plays an important role in the hot carrier test. Because of the stress due to atomic size mismatch between the nitride spacer and silicon, trap-assisted hot electron tunneling is more significant in a nitride spacer LDD device than in the oxide spacer counterpart. A thicker bottom oxide can eliminate this effect. However, the optimal thickness of the nitride spacer bottom oxide should be varied for different poly-silicon gate structures. The hot carrier stress in a nitride spacer LDD device causes multi-stage degradation under Isub,max stress. It is dominated by electron trapping at the early stage, interracial state (Nit) creation at the second stage, and self-limiting hot carrier degradation at the final stage. The degradation for Ig,max stress in nitride spacer LDD devices is mostly caused by electrons trapped in the nitride/oxide interface.
關聯:	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers Volume 41, Issue 8, August 2002, Pages 5078-5082
显示于类别:	[電機工程學系所] 期刊論文

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