The study of threshold voltage extraction of nitride spacer NMOS transistors in early stage hot carrier stress

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Title:	The study of threshold voltage extraction of nitride spacer NMOS transistors in early stage hot carrier stress
Authors:	Tsai, J.-L.a, Huang, K.-Y.a, Lai, J.-H.a, Gong, J.a, Yang, F.-J.b, Lin, S.-Y.b
Contributors:	Department of Electrical Engineering, Tunghai University
Keywords:	gm-maximum extrapolation;Hot carrier stress;Series drain resistance;Threshold voltage extraction
Date:	2002
Issue Date:	2013-05-15T09:09:47Z (UTC)
Abstract:	Threshold voltage Vt extracted by gm-maximum extrapolation method under early stage hot carrier stress is proven to be an inappropriate method once electrons are trapped in a nitride spacer. The trapping of electrons in a nitride spacer increases the series drain resistance, reducing the transconductance gm and the corresponding gate-to-source voltage Vgs at which peak gm occurs. It ultimately decreases the threshold voltage Vt extracted by the gm-maximum extrapolation method. A novel algorithm is derived to determine the relationship between the measured data and the true threshold voltage of such a device under hot carrier stress by considering the effect of series resistance in gm-maximum extrapolation method.
Relation:	IEEE Transactions on Electron Devices Volume 49, Issue 8, August 2002, Pages 1488-1490
Appears in Collections:	[Department of Electrical Engineering ] Periodical Articles

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