The 1/ f noise associated with electromigration in AlSiCu thin films

THUIR > College of Engineering > Department of Electrical Engineering > Periodical Articles > Item 310901/22097

Please use this identifier to cite or link to this item: http://140.128.103.80:8080/handle/310901/22097

Title:	The 1/ f noise associated with electromigration in AlSiCu thin films
Authors:	Cheng, Y.a, Gong, J.a, Liou, D.-M.b, Yee, H.
Contributors:	Department of Electrical Engineering, Tunghai University
Keywords:	1/f noise;1/f 2 noise;AlSiCu thin films;AlSiCu/TiW thin films;Electromigration;Resistance-drift-induced 1/f 2 noise
Date:	1999
Issue Date:	2013-05-15T09:10:28Z (UTC)
Abstract:	Noise measurements were performed on electromigration-damaged single-layer AlSiCu films, that show no resistance change and on multilayer AlSiCu/TiW films that show obvious resistance increase before the samples open. The experimental results showed that single-layer AlSiCu films have 1/ f noise only, and no 1/ 2 noise is observed during the entire stress period. Moreover, the 1/ f noise increases drastically shortly before the samples open. For multilayer samples, 1/ f 2 noise was observed during the stress period, and increased with the stress current density. This result implies that the theory of resistance-drift-induced 1/ f 2 noise is valid in electromigration-damaged metal thin films. ? 1999 Publication Board, Japanese Journal of Applied Physics.
Relation:	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers Volume 38, Issue 1, 1999, Pages 291-292
Appears in Collections:	[Department of Electrical Engineering ] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	1218	View/Open