Application of tie-line concept on the liquid phase epitaxial growth of GaInAsP on InP

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題名:	Application of tie-line concept on the liquid phase epitaxial growth of GaInAsP on InP
作者:	Chang, S.Y.a, Hsueh, K.-L.a, Gong, J.b, Lin, J.C.b
貢獻者:	Department of Electrical Engineering, Tunghai University
日期:	1988
上傳時間:	2013-05-15T09:11:56Z (UTC)
摘要:	As the variation of melt composition follows the tie-line relation, an epilayer with a given composition can be grown from the melts with different compositions at a fixed temperature. This was tested by the LPE experiments of InGaAsP epilayer growth. A set of epilayers, with wavelength 1.55±0.05 μm and lattice matched to InP (100) substrate ( Δa a<0.3%), were obtained in the melt with different compositions. The growth rate of epilayers varied in different melts. This was due to the degree of supersaturation changing as the melt composition varied along the tie line. The relationship between epilayer growth rate and supersaturation was mathematically derived and qualitatively agreed with the experimental results. ? 1988.
關聯:	Journal of Crystal Growth Volume 92, Issue 3-4, 2 October 1988, Pages 454-460
顯示於類別:	[電機工程學系所] 期刊論文

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