Epitaxial CuInS2 layers were grown on GaP substrates by liquid phase epitaxy using indium as solvent. Both n- and p-type layers with a wide range of electrical characteristics were obtained at a growth temperature of 805 ?C with a cooling rate ranging from 0.6 to 0.8 ?C min-1. However, the observed photoluminescence consisted of broad emissions and did not show sharp edge emission or bound exciton line emission. Although improvements are still needed in the liquid phase epitaxial growth, the feasibility of fabricating heterojunction photodiodes using CuInS2 is clearly shown. ? 1986.
Relation:
Thin Solid Films Volume 144, Issue 2, 15 November 1986, Pages 229-239
