Disproportionation and comproportionation reactions of resistive switching in polycrystalline NiOx films

THUIR > College of Science > Department of Chemistry > Periodical Articles > Item 310901/22502

Please use this identifier to cite or link to this item: http://140.128.103.80:8080/handle/310901/22502

Title:	Disproportionation and comproportionation reactions of resistive switching in polycrystalline NiOx films
Authors:	Chien, F.S.-S., Wu, Y.T., Lai, G.L., Lai, Y.H.
Keywords:	Bistables;Chemical bonding state;Conducting atomic force microscopy;Disproportionations;Expansion and contraction;Gibbs energy;High potential;Nano scale;Non-volatile-memory applications;Polycrystalline;Resistive switching
Date:	2011
Issue Date:	2013-05-21T09:08:25Z (UTC)
Publisher:	Department of Chemistry, Tunghai University
Abstract:	NiOx thin film exhibited excellent bistable unipolar resistive switching (RS), which has a high potential in nanoscale nonvolatile-memory applications. The underlying reaction of RS in NiOx is still in debate. We studied the chemical bonding states of Ni 2p and O 1s at high/low resistance spots using focused x-ray photoelectron spectroscopy. The disproportionation and comproportionation reactions of 3NiONi+ Ni2 O3 accounted for the RS of NiOx. The calculated Gibbs energy of the reaction interpreted its reversibility in thermodynamics. The expansion and contraction of the filaments with switching were observed by conducting atomic force microscopy. ? 2011 American Institute of Physics.
Relation:	Applied Physics Letters 98 (15) , art. no. 153513
Appears in Collections:	[Department of Chemistry ] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	174	View/Open