Fabrication of Ni nanostructures on p-Si by scanning probe lithography on Si 3N 4 films and selective electrodeposition

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题名:	Fabrication of Ni nanostructures on p-Si by scanning probe lithography on Si 3N 4 films and selective electrodeposition
作者:	Lin, C.-Y., Chang, C.-S., Chien, F.S.-S.
贡献者:	Department of Physics, Tunghai University
关键词:	Electrodeposition;Magnetic Metal-Si Schottky Contact;Scanning Probe Lithography
日期:	2010
上传时间:	2013-05-21T09:15:07Z (UTC)
摘要:	Ni-Si nano Schottky junctions are fabricated by the combined process of scanning probe lithography and electrodeposition. The Si 3N 4 film was patterned by probe-induced oxidation and became a mask for selective electrodeposition of Ni on p-Si substrate. The Ni pattern consists of Ni nano dots, whose diameter is less then 60 nm. The composition and ferromagnetism of Ni dots are verified by energy dispersive spectrum and magnetic force microscopy. The schottky barrier of Ni-Si nano contact is 0.52 V determined by the l-V measurement of conducting atomic force microscopy (CAFM). From current mapping images, it shows that chemical impurity at the Ni-Si interfaces can result in the poor conductance of the junctions. ? 2010 American Scientific Publishers.
關聯:	Journal of Nanoscience and Nanotechnology 10 (7) , pp. 4454-4458
显示于类别:	[應用物理學系所] 期刊論文

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