Tunghai University Institutional Repository:Item 310901/22729
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    Please use this identifier to cite or link to this item: http://140.128.103.80:8080/handle/310901/22729


    Title: Effect of threading dislocations on local contacts in epitaxial ZnO films
    Authors: Lin, C.Y., Liu, W.-R., Chang, C.S., Hsu, C.-H., Hsieh, W.F., Chien, F.S.-S.
    Contributors: Department of Physics, Tunghai University
    Keywords: Bandbending;Edge threading;Grain structures;High density;Nonuniformity;Schottky;Schottky barriers;Schottky contacts;Threading dislocation;ZnO;ZnO films
    Date: 2010
    Issue Date: 2013-05-21T09:15:25Z (UTC)
    Abstract: Local conductance of a ZnO epifilm with a columnar-grain structure was studied by conductive-mode atomic force microscopy. The probe-ZnO junction at the grain boundary with high density edge threading dislocations (TDs) behaves as a Schottky contact while the junction at the epitaxial core behaves as an ohmic contact, resulting in the nonuniformity of conductance throughout the film. The calculated Schottky barrier is 0.4?0.025 eV. The point defects of doubly charged Zn vacancies accumulated at the edge TDs induce local band bending of ZnO, thus contributing to the Schottky nature at the grain boundary. ? 2010 The Electrochemical Society.
    Relation: Journal of the Electrochemical Society 157 (3) , pp. H268-H271
    Appears in Collections:[Department of Applied Physics] Periodical Articles

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