在本論文中，我們利用溶膠-凝膠法製備摻雜銅之鈦酸鍶鋇介電陶瓷塊材及薄膜，並觀察其微結構及介電性質的變化。我們發現Cu的含量對於BSTCu塊材和薄膜的材料性質會有顯著的影響。BSTCu塊材在空氣下經1400 °C的溫度燒結，其相對密度、晶粒大小、及介電常數，在Cu含量為0 ~ 5.0 mol %時，會隨著Cu的含量增加而增加；當Cu含量超過5.0 mol %時，便會隨著Cu的含量增加而降低。在100 KHz頻率下，當Cu含量為5.0 mol %時，有最大的介電常數值1500，及最小的介電損失0.026。而當Cu含量為10.0 mol %時，有最小的熱膨脹係數5.35 ppm/°C。 而BSTCu薄膜是塗佈在Pt/Ti/SiO2/Si基板上，經750 °C退火處理，其晶粒大小、均方根粗糙度、介電常數、及可調性，在Cu含量為0 ~ 5.0 mol %時，會隨著Cu的含量增加而增加；當Cu含量超過5.0 mol %時，便會隨著Cu的含量增加而降低。在1 MHz頻率下，當Cu含量為5.0 mol %時，有最大的介電常數值810，及最大的可調性66.7 %。在1 MHz頻率下，當Cu含量為2.5 mol %時，有最小的介電損失0.0214。 In this thesis, we reported on the microstructural and dielectric properties of Cu-doped Ba0.6Sr0.4TiO3 bulks and thin films prepared by sol-gel method. The Cu concentration of BSTCu bulks and thin films has a strong influence on the material properties.The bulks were sintered at a constant temperature of 1400 ?C. The relative density, grain size, and dielectric constant of BSTCu bulks all increase with increasing Cu content from 0 to 5.0 mol % and then decrease with increasing Cu content up to 10.0 mol %. The system doped with 5.0 mol % Cu exhibits the highest dielectric constant of 1500 and the lowest dielectric loss of 0.026 at 100 KHz. The system doped with 10.0 % Cu has the lowest thermal expansion coefficient of 5.35 ppm/?C.The thin films were coated on Pt/Ti/SiO2/Si substrates and then annealed at a temperature of 750 ?C. The grain size, root-mean-square roughness, dielectric constant and tunability of BSTCu thin films all increase with increasing Cu up to 5.0 mol % and then decrease with increasing Cu content from 5.0 to 10.0 mol %. The system doped with 5.0 mol % Cu exhibits the highest dielectric constant of 810 and tenability of 66.7 % at 1 MHz. The system doped with 2.5 mol % Cu exhibits the lowest dielectric loss of 0.0214 at 1 MHz.
