The study of improving high voltage LIGBT substrate leakage current

THUIR > College of Engineering > Department of Electrical Engineering > Conference Papers > Item 310901/24961

Please use this identifier to cite or link to this item: http://140.128.103.80:8080/handle/310901/24961

Title:	The study of improving high voltage LIGBT substrate leakage current
Authors:	Tu, Y.-R.;Gong, J.
Contributors:	Department of Electrical Engineering, Tunghai University
Keywords:	Break down voltage;Buried layer;Electrical field;Four-order;High voltage;Hole current;Lateral insulated gate bipolar transistors;LIGBT;N-type buried layer;P-n junction;P-type;P-type substrates;Substrate current;Vertical electric fields;Information technology;Leakage currents;Substrates
Date:	2012-11-10
Issue Date:	2014-06-20T02:30:15Z (UTC)
Publisher:	Guangzhou
Abstract:	This paper aims to the research of high voltage lateral insulated gate bipolar transistor (LIGBT) and proposes the design for reducing the substrate leakage current of this device. The junction between LIGBT's p-type substrate and n-epi layer may have a large electrical field and causes the hole current to flow during the turn-on state. To prevent this substrate leakage current, an n-type buried layer (NBL) and a p-type buried layer (PBL) are used. The double reverse biased pn-junction structure effectively reduces the vertical electric field such that the substrate current is reduced by four orders of magnitude. The break down voltage of the LIGBT is not hurt by this added structure at all. ? (2013) Trans Tech Publications, Switzerland.
Relation:	2012 International Conference on Information Technology and Management Innovation, ICITMI 2012 Applied Mechanics and Materials,V.263-266,Issue PART 1,P.60-63
Appears in Collections:	[Department of Electrical Engineering ] Conference Papers

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