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    Please use this identifier to cite or link to this item: http://140.128.103.80:8080/handle/310901/31157


    Title: 矽奈米線紙製作、雷射熔接及特性研究
    Other Titles: Fabrication、Laser Welding and Characterizations of Silicon Nanowires Paper
    Authors: 王佑元
    Yu-Yuan Wang
    Contributors: 蕭錫鍊
    Hsi-Lien Hsiao
    應用物理學系
    Keywords: 矽奈米線;;真空過濾法;雷射熔接;電導性
    silicon nanowires;paper;vacuum filtration;laser welding;conductivity
    Date: 2018
    Issue Date: 2019-01-10T09:13:49Z (UTC)
    Abstract: 在本研究中,提出了新穎的製程來製作奈米線紙,此種方式提高了重複性以及過程中的潔淨度,並利用掃描脈衝式雷射進行奈米線熔接,以增強可撓式奈米線紙結構的電導性。本研究利用低壓化學氣相沉積系統(Low Chemical Vapor Deposition , LPCVD)在鋁基板上形成平均直徑約350nm、長度大於150μm的摻磷矽奈米線,並透過滾壓及冰轉移法後形成矽奈米線水溶液。接著透過真空過濾沉積法,首先在濾紙上形成一層緩衝層,避免因雷射熔接過程中,因加熱矽奈米線而導致濾紙纖維蒸發,進而破壞奈米線紙結構。接著形成淺黑色的矽奈米線紙,並使用掃描式脈衝雷射進行熔接後,由掃描式電子顯微鏡(Scanning Electron Microscope , SEM)觀察到交錯的矽奈米線間,產生熔接點且奈米線表面產生融溶態形貌。透過電性量測下,經由雷射熔接處理過後的矽奈米線紙,其電導率獲得大幅度的提升。然而,須注意過大的功率將破壞紙張,矽奈米線也將被矽球的形貌所取代。   一張外觀黑色的矽奈米線紙成功被製備出來,並利用脈衝雷射熔接奈米線的技術,透過掃描式電子顯微鏡和電性量測技術,找到熔接最佳功率,證明本處理能夠大幅提升其電導性,使之具有成為柔性半導體基板的潛力。
    Here, a novel fabrication process with higher reproducibility and a clean method was proposed to fabricate silicon nanowires papers and a scanning pulse laser welding approach was used to enhance the electrical conductivity for flexible electronic applications. For fabrication of silicon nanowires paper, the phosphorus-doped silicon nanowires forest with length of larger than 150μm and average diameter of 350 nm were synthesized on aluminum substrates by low pressure chemical vapor deposition. A rolling and ice stripping approach was conducted to transfer the nanowires and form nanowires suspension solution. A nanowires buffer layer was firstly deposited onto the filter paper through vacuum filtration to reduce the adhesion between filter paper and nanowires paper. And then silicon nanowires paper with micrometer thickness was formed and exhibit lightly dark appearance. A scanning pulse laser welding process was used to bond and anneal the nanowires paper, and the welding points between the silicon nanowires were observed successfully via Scanning Electron Microscope images. And laser welding process that could improve the electrical conductivity was confirmed. It is noted that the conductivity increased with increasing the laser power density. However, too high the power density would damage the paper. Moreover, the thickness of oxide sheath also increased while increasing the power density.The prepared silicon nanowires paper demonstrates a novel type black wafer with silicon characteristics .And the significant enhancement of electrical conductivity was observed by Scanning Electron Microscope (SEM) images and electrical analysis after laser welding process ,thus, a promising candidate for flexible electronics.
    Appears in Collections:[應用物理學系所] 碩博士論文

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