異質接面矽奈米線太陽能電池製作

Tunghai University Institutional Repository > 理學院 > 應用物理學系所 > 碩博士論文 > Item 310901/31159

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Title:	異質接面矽奈米線太陽能電池製作
Other Titles:	Fabrication of Heterojunction Silicon Nanowires Solar Cells
Authors:	高佩琪 KAO, PEI-CHI
Contributors:	蕭錫鍊 Hsi-Lien Hsiao 應用物理學系
Keywords:	矽奈米線;垂直方向;鎵;電容耦合式電漿輔助化學氣相沉積系統 silicon nanorod;vertically oriented;gallium;PECVD
Date:	2018
Issue Date:	2019-01-10T09:14:00Z (UTC)
Abstract:	本論文採用40.68 kHz電容耦合式射頻電漿輔助化學氣相沉積系統（PECVD）和電感耦合式射頻電漿輔助化學氣相沉積系統（ICP-CVD）系統製備了p型矽奈米線和PIN結構太陽能電池。合成垂直取向p型矽奈米線的實驗參數是本研究的主要議題。透過橢圓儀（SE）和拉曼光譜測定n-a-Si：H / i-a-Si：H薄膜的質量和結構性質。並分析矽奈米線太陽能電池討論其I-V特性。利用電子束蒸鍍機將鎵觸媒沉積在不同的基板上。接下來，將製備的樣品輸送到PECVD以合成p型矽奈米線。在生長p型矽奈米線之後，透過HF蝕刻p型矽奈米線尖端上所殘留的鎵觸媒。最後，將蝕刻的p型矽奈米線裝入ICP-CVD中以沉積n-a-Si：H / i-a-Si：H薄膜，製造出矽奈米線太陽能電池。為了了解鎵觸媒在不同退火條件下的影響。我們發現鎵觸媒會在H2電漿中自催化合成約100 nm的鎵奈米線。接下來，我們改變了生長溫度，Ar流量，電極距離和不同的基板，以優化p型矽奈米線的合成條件。我們觀察到550 ℃高溫合成的p型矽奈米線可以比500 ℃更垂直地生長。類似地，不同的電極距離改變了p型矽奈米線的筆直度。當電極距離為2 cm時，自偏壓足以引導p型矽奈米線垂直生長。我們還發現，增加約200 sccm的Ar 流量將導致電漿中的Ar 離子撞擊p型矽奈米線。我們認為是Ar 離子因電場加速而影響p型矽奈米線。在我們的實驗中，發現了製程p型矽奈米線的優化條件。合成條件為Ar 50 sccm，H2 200 sccm，SiH4 4 sccm，2 cm電極距離和30 W電漿功率以製程垂直方向的p型矽奈米線。最後，將n-a-Si：H / i-a-Si：H薄膜沉積在p型矽奈米線上來製造出p型矽奈米線太陽能電池。在我們的測量中，我們確定了整流二極體的特性。 In this thesis, p-type silicon nanorods and PIN structure solar cells were fabricated by 40.68 kHz plasma enhanced chemical vapor deposition (PECVD) and inductively-coupled plasma enhanced chemical vapor deposition (ICP-CVD) system. The experiment parameters of synthesized vertically oriented p-type silicon nanorods is the main issue in this research. The quality and structural properties of n-a-Si:H/i-a-Si:H thin film was determined by spectroscopic ellipsometry (SE) and Raman spectral. The silicon nanorods solar cells was analyzed to discuss the I-V characteristics. The gallium catalyst was deposited by e-beam evaporator on different substrates. Next, prepared samples were transported to PECVD chamber to synthesize p-type silicon nanorods. After growth p-type silicon nanorods, the residual gallium catalyst on the tip of p-type silicon nanorods was etching by HF. Finally, the etched p-type silicon nanorods were loaded in ICP-CVD to deposit n-a-Si:H/i-a-Si:H thin film, and fabricated the silicon nanorods solar cells. In order to understand the influence for gallium catalyst in different annealing conditions. We found that gallium catalyst would self-catalysis to synthesize the gallium nanowire about 100 nm in H2 plasma. Next, we were changed the growth temperature, Ar flow rate, electrode distance, and different substrate to optimize the synthesized conditions of p-type silicon nanorods. We observed that synthesized p-type silicon nanorods with high temperature about 550 °C can growth more vertically than 500 °C. Similarly, different electrode distance was changed the straightness about p-type silicon nanorods. When electrode distance was 2 cm, the self-bias was enough strong to guide p-type silicon nanorods growth vertically. We also found that increasing the Ar flow rate about 200 sccm would lead to Ar+ bump p-type silicon nanorods in plasma. It is believed that Ar+ was accelerated by electrical field to impact p-type silicon nanorods. In our experiments, the optimized conditions of fabricated p-type silicon nanorods were found out. The synthesized conditions are Ar 50 sccm, H2 200 sccm, SiH4 4 sccm, 2 cm of electrode distance, and 30 W of plasma power to fabricate vertically oriented p-type silicon nanorods. Finally, the n-a-Si:H/i-a-Si:H thin film was deposited on p-type silicon nanorods to fabricate the p-type silicon nanorods solar cell. In our measurement, we were identified rectifying diode characteristics.
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