高品質因素尖晶石結構之介電材料研製及微波應用

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Title:	高品質因素尖晶石結構之介電材料研製及微波應用
Other Titles:	The Study, Fabrication, and Applications on Microwave of Spinel Dielectric Materials With High Quality Factor
Authors:	郭建承 GUO, JIAN-CHENG
Contributors:	林士弘 LIN, SHIH-HUNG 電機工程學系
Keywords:	微波介電陶瓷;微波介電特性;濾波器;摻雜 Microwave ceramic;Microwave dielectric Characteristics;Filter;Doping
Date:	2019
Issue Date:	2019-03-21T09:13:12Z (UTC)
Abstract:	隨著無線通訊的發展，人們對於行動裝置的依賴程度越來越高，其中微波電路的效能及微縮扮演十分重要的角色，設計高穩定度且微小化的微波元件就顯得十分關鍵。因此，介電陶瓷材料是目前製作微波元件基板較佳的選擇，其高介電係數可以使電子元件縮小、高品質因素可以提高儲存電磁波之能量以及趨近於零的共振頻率溫度飄移係數，則是可以使微波元件在不同溫度下，均得以穩定操作。本論文先討論微波介電陶瓷材料[(Mg0.6Zn0.4)]0.95Co0.05]2TiO4摻雜Sn之微波特性，從實驗結果顯示，[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4燒結溫度為1325 ℃時有最好的介電特性(εr~15.4、Qൈf~280,000 GHz、τf~-35 ppm/℃)，得到摻雜Sn後有更好之材料特性，因此我們將以此材料為主相做更進一步特性改善。我們以固態合成法製備[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4粉末作為原始介電材料，混相微量的CaTiO3與Ca0.6La0.2667TiO3粉末以改善它的微波介電性能。可以由實驗結果得知，在比例為0.93{[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4}-0.07CaTiO3 燒結溫度為1350 ℃時有最好的介電特性(εr~19.93、Qൈf~50,000 GHz、τf~6 ppm/℃)；0.8{[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4}-0.2Ca0.6La0.2667TiO3燒結溫度為1300 ℃時有最好的介電特性(εr~23.95、Qൈf~57,000 GHz、τf~5 ppm/℃)。最後為了驗證自製微波介電材料對微波元件特性的影響，以 FR4、Al2O3 、 0.93{[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4}-0.07CaTiO3 與0.8{[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4}-0.2Ca0.6La0.2667TiO3 自製基板，以 ADS 模擬步階阻抗低通濾波器，截止頻率為 1.8 GHz。可以發現 0.93{[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4}-0.07CaTiO3 與0.8{[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4}-0.2Ca0.6La0.2667TiO3 為其基板材料，皆能夠縮小濾波器面積，因此可以有效降低整體電路尺寸並擁有極佳之微波元件性能。 With the development of wireless communication, people were increasingly dependent on mobile devices. The performance and miniaturization of microwave circuits played an important role. Designing high-stability and miniaturized microwave components was very critical. Therefore, dielectric ceramic materials are currently the better choice for fabricating microwave component substrates. Size reduction of electronic components can be achieved with high dielectric constant, the high quality factor means better ability for storage of the electromagnetic waves energy, and near zero temperature coefficient of resonant frequency means that device could operate stably under wide range of temperature.The microwave dielectric properties of the [(Mg0.6Zn0.4)]0.95Co0.05]2TiO4 doping with Sn was discussed in this thesis. The experimental results showed that [(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4 sintered at 1325 ℃ possessed the best dielectric properties. (εr~15.4, Qൈf~280,000 GHz and τf~-35 ppm/℃) We obtained the better dielectric properties after we doped originalmaterial with Sn. Therefore, we used this main phase material to make further improvement.[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4 prepared by the solid statesynthesis and then mixed with the CaTiO3 and Ca0.6La0.2667TiO3 to improve its microwave dielectric properties. From the experimental results showed that 0.93{[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4}-0.07 CaTiO3 sintered at 1350 ℃ possessed the best dielectric properties (εr~19.93, Q ൈ f~50,000 GHz and τf ~6 ppm/ ℃ ).0.8{[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4}-0.2Ca0.6La0.2667TiO3 sinteredat 1300 ℃ possessed the best dielectric properties(εr~23.95,Qൈf~57,000 GHz and τf ~5 ppm/℃).Finally, in order to verify the effect of self-made microwave dielectric materials on the characteristics of microwave components. Step impedance low pass filter was simulated with ADS using following substrates FR4, Al2O3, 0.93{[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4}-0.07CaTiO3, and 0.8 {[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4}-0.2 Ca0.6La0.2667TiO3 self-made substrates. Filter size could be reduced using self-made substrates 0.93{[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4} - 0.07 CaTiO3 and 0.8{[(Mg0.6Zn0.4)]0.95Co0.05]2(Ti0.95Sn0.05)O4}-0.2Ca0.6La0.2667TiO3.Therefore, overall circuit size could effectively reduce with excellentmicrowave component performance.
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