摘要 本論文以不同電化學蝕刻條件，對鋁箔進行電蝕刻，並於含界面活性劑DBSA溶液中製備Ppy/Al2O3/Al，進行Ppy/Al2O3/Al之性質分析，最後將Ppy/Al2O3/Al試片組裝成電容器，測試其電容性質。 首先於 HCl溶液中在不同條件下進行鋁箔電蝕刻，探討製備過程中，不同條件對Ppy/Al2O3/Al之影響，探討條件包括：蝕刻電流密度、蝕刻溫度以及添加不同種類的酸。在鋁箔性質上，則以複製膜方法配合SEM圖觀察不同電蝕刻條件對蝕刻孔洞之影響，在電容性質分析上以漏電流表量測漏電流，量測不同頻率下之電容量、D值與ESR，最後並藉由混合物實驗設計法探討三種不同酸（鹽酸、硫酸與過氯酸）進行鋁箔電蝕刻並且製備Ppy/Al2O3/Al元件之最佳蝕刻液組成。 在電蝕刻過程中，發現以固定通電量(3C)下，分別以150與200 mA cm-2進行電蝕刻製備Ppy/Al2O3/Al，電容量分別為2530.0與654.3nF cm-2，而介電損耗則為30.1及10.6 %，而兩者之漏電流皆太大，則需藉由再化成進行氧化膜修補。 在製備Ppy/Al2O3/Al（電蝕刻）組裝完成之電容器可藉由0.02M DBSA溶液進行氧化膜修補，且在適當再化成條件下，漏電流值可以達到可接受之值。 以鋁合金粉進行擠壓，並於高純氮下進行燒結，以此基材進行Ppy/Al2O3/Al之製備，電容量可達到8789.0μF cm-2，D值為13530%與ESR為4.14Ω，但漏電流太大。因此改變不同化成方式，其中發現以再化成所得到之漏電流較小為79.6mA cm-2，但電容量則下降為741.7 nF cm-2。 關鍵字: 聚?咯、蝕刻、再化成、鋁質固態電容器。 Abstract The properties of Ppy/Al2O3/Al prepared by electrochemical etching Al foil with various conditions in the presence of DBSA surfactant were investigated.The Ppy/Al2O3/Al solid capacitor is assembled and the capacitive characteristics were also measured . The effects of the etching conditions including the etching current density，the temperature and the addition of acids on the preparation of Ppy/Al2O3/Al were investigated. An epoxy replica technique accompanied with SEM was employed to study the effect of etching conditions on the internal structure of the etch pits. The leakage current and the capacitive properities including capacity, D and ESR are measured by using the leakage current meter and the LCR meter, respectively. The capacitive characteristics under various frequencies were also measured in this work. Finally, the optimal composition of the etchants for electrochemical etching Al foils based on three acids (Hydrochloric acid、sulfuric acid and perchloric acid ) was obtained by the method of mixture design. The capacities and the D values of Ppy/Al2O3/Al were obtained to be 2530.0 nF cm-2 and 30.1%, and 654.3 nF cm-2 and 10.6 %, respectively, when the Al foil was etched at current densities of 150 and 200 mA cm-2 for etching charge of 3 C. However, the oxide film for both cases must be repaired by the reformation process due to the leakage currents greater than the acceptable values. The leakage current of Ppy/Al2O3/Al (electrochemical etching) prepared in this thesis could be depressed to be an acceptable value by reforming the oxide film in 0.02M DBSA with the suitable conditions. The capacity, D value and ESR of Ppy/Al2O3/Al prepared by compressing and sintering Al alloy powders in a high purity .nitrogen atmosphere were obtained to be 8789.0μF cm-2, 13530% and 4.14Ω. The leakage current could be depressed to be 79.6mA cm-2 by using the reformation method in 0.02 M DBSA solution. The reformation procedure also caused the decrease of capacity to 741.7 nF cm-2. Keywords: polypyrrole, etching, reformation , aluminum solid state capacitor
