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http://140.128.103.80:8080/handle/310901/757
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| Title: | 以濺鍍法製備BiFeO3膜及其結構之研究 |
| Other Titles: | Fabrication and structural characterization of sputtered BiFeO3 films |
| Authors: | 李文?
Li, Wen-Lin |
| Contributors: | 張晃暐
Chang, H.W.
東海大學物理學系 |
| Keywords: | 多鐵, 鐵酸鉍, 鐵電, 濺鍍法
BiFeO3, multiferroic, XRD, ferroelectric |
| Date: | 2010 |
| Issue Date: | 2011-01-10 |
| Abstract: | 多鐵材料為一種新穎之多功能性材料，而BiFeO3為具磁電效應之多鐵材料，其高相變溫度(TC~1103K及TN~643K)與薄膜形態下之優異鐵電特性，使之受到相當大的重視，可望成為新ㄧ代儲存媒體材料。 本實驗採用射頻濺鍍法製備BiFeO3膜，沉積於玻璃基板與Pt/Ti/SiO2/Si等兩種不同基板上，研究了改變不同實驗參數(包含功率: 10-180 W; 氬氧比: 3:1-9:1; 基板溫度: 300-700 oC; 以及膜厚: 50-380 nm)對其結構之影響。實驗結果發現在玻璃基板上，薄膜厚度需達300 nm以上始有空間群為R3c之鈣鈦礦結構BiFeO3相之形成。在Pt/Ti/SiO2/Si(100)複合基板上，於膜厚: 50-380 nm，濺鍍功率: 20-180 W，氬氧比: 3:1-9:1與基板溫度:450-575 oC，皆可獲得純的單一BiFeO3相之膜。另本研究發現於不同基板溫度成長BiFeO3膜時，其晶體結構、表面粗糙度與晶粒尺寸隨之改變，此結果指出不同成長溫度下，其膜結構成長形態有所不同。
Multiferroic materials exhibit the multifunctional properties. Among them, BiFeO3 compound shows both a ferroelectric phase transition at the high Curie temperature of TC = 1103 K and a magnetic phase transition at the N?el temperature of TN=643 K. BiFeO3 film has a strong ferroelectric at room temperature. Therefore, BiFeO3 film has drawn much attention due to potential applications in the spintronic and memory devices that can be addressed both electrically and magnetically. In this study, BiFeO3 films were deposited by RF sputtering on glass and Pt/Ti/SiO2/Si substrate, respectively, and effect of experimental parameters, including the sputtering power (10-180 W), substrate temperature (300-700 ℃), the ratio of pressure of Ar and O2 (3:1-9:1), and film thickness (50-380nm), on the structural evolution of BiFeO3 (BFO) thin films have been investigated. The experimental results show that pure BFO phase is present for the thickness larger than 300 nm on the amorphous glass substrate. On the other hand, on the Pt/Ti/SiO2/Si(100) substrate, pure single BiFeO3 phase with perovskite (R3c) structure could be easier to obtain for wide experimental parameters, including thickness of 50-380 nm, sputtering power of 20-180 W, the Ar/O2 pressure ratio 3:1-9:1; heat treatment temperature of 450-575 oC. Besides, summarized with XRD, SEM, and AFM results, it is also found that different growth state occurs for various growth temperatures. |
| Appears in Collections: | [應用物理學系所] 碩博士論文
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