本論文探討將半導體飽和吸收鏡置於平凹共振腔內，來產生被動鎖模摻釹釩酸釔雷射。在使用飽和吸收為2 %之飽和吸收鏡時可得到穩定的連續波鎖模，在最大吸收功率為1.3 W之下，平均輸出功率為240 mW，重覆率為369 MHz，脈衝寬度為11 ps。飽和吸收為0.5 %及1 %者皆可得到穩定之Q開關鎖模。當使用飽和吸收為0.5 %及1 %的飽和吸收鏡時，只能產生Q開關鎖模，其最大峰值功率分別為 1.3 kW和617.4 W。我們同時也利用五鏡式共振腔加以驗證此系統在長腔中依然可以運作。 In this thesis, passive mode locking of diode-pumped Nd:YVO4 lasers are investigated by placing a semiconductor saturable absorber mirror (SAM) in a plano-concave cavity. By using the SAM with 2 % absorbance, the laser is able to generate continuous wave mode-locked pulses with average output power of 240 mW, repetition rate of 369 MHz, and duration of 11 ps under absorbed pump power of 1.3 W. When the SAM with absorbance of 0.5 % and 1 % was used, the lasers could only operate at Q-switched mode locked state. The peak power as high as 1.3 kW and 617.4 W is achieved for the SAM with absorbance of 0.5 % and 1 %, respectively. Our scheme with a long cavity is also demonstrated in terms of a five elements resonator.
