奈米線太陽光電池製程技術之研究

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題名:	奈米線太陽光電池製程技術之研究
其他題名:	Development of fabrication processes for nanowires based solar cell
作者:	沈冠瑜 Shan, Kuan-Yu
貢獻者:	蕭錫鍊 Hsiao, Hsi-Lien 東海大學物理學系
關鍵詞:	太陽光電池;奈米線;矽 solar cell;nanowires;silicon
日期:	2010
上傳時間:	2011-01-10
摘要:	本研究目的為嘗試在不同的電漿氣氛下，對奈米線進行金觸媒去除、奈米線表面氧化、奈米線選擇性蝕刻製程，以期能發展出可以保留筆直直立矽奈米線形貌之製程方式。在氫電漿氣氛作用下，調變樣品位置、射頻功率與製程時間進行去除金觸媒與選擇性氫蝕刻。我們發現將樣品倒掛置於射頻端，提高射頻功率則金觸媒會減少直到消失且熱燈絲輔助成長奈米線表面的非晶矽包覆層被部分去除造成奈米線直徑變細，而使用過高的射頻功率則會破壞奈米線。對氧化後之矽奈米線使用低射頻功率氫電漿則可去除部分的氧化層。在氧電漿氣氛作用下，調變樣品位置、射頻功率與製程時間進行奈米線表面氧化。我們發現將樣品倒掛置於射頻端會同時進行氧化與物理轟擊的作用，置於接地端時會受到來自濺鍍上電極而得的鐵汙染，使用低射頻功率進行氧化可得到隨時間變化而增厚的奈米線表面氧化層。我們發現在氫電漿氣氛射頻功率25瓦製程時間30分時可以得到去除金觸媒且未破壞的矽奈米線。在氧電漿氣氛射頻功率10瓦，可得到隨時間變化而增厚的奈米線表面氧化層。在氫電漿氣氛射頻功率10瓦會以和緩的方式去除部分的矽氧化層。 In this thesis, the removal of gold catalysts, surface oxidation, and reactive ion etching of nanowires are carried out under exposure to different plasma gases, hoping to develop the fabrication retaining the appearance of vertically oriented silicon nanowires array.Under the reaction of hydrogen plasma, site of sample, power of radio frequency, and time of fabrication is adjusted to remove gold catalysts and carry out reactive ion etching. We find that when samples were inversely suspended at radio frequency electrode, with the enhancement of the power of radio frequency, gold catalysts begin to diminish and finally disappear and the amorphous silicon films of vertically oriented silicon nanowire are partly pared off; however, silicon nanowires would be destroyed as a result of excessively high power of radio frequency. With the reaction of hydrogen plasma of low radio frequency power, the oxidized layers of surface oxidation silicon nanowires can be partly removed.Under the reaction of oxygen plasma, site of sample, power of radio frequency, and time of fabrication is adjusted to oxidized surface of nanowires. We find that when samples were inversely suspended at radio frequency electrode,it was oxidized and physical bombarded at the same time.When samples were placed at ground electrode,it was contaminate by iron which is sputtering from the radio frequency electrode. With the reaction of oxygen plasma of low radio frequency, after oxidation the diameters of nanowires are increased when time increasing.We find under the reaction of hydrogen plasma at radio frequency power 25W with fabrication time 30mins,can got the catalysts removed and undamaged nanowires. With the reaction of oxygen plasma of radio frequency power 10W, after oxidation the diameters of nanowires are increased when time increasing. With the reaction of hydrogen plasma of radio frequency power 10W, the oxidized layers of surface oxidation silicon nanowires can be partly removed.
顯示於類別:	[應用物理學系所] 碩博士論文

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