The effect of partially undoped poly-silicon gate above the drift region in P-Lateral Double-Diffused MOS (P-LDMOS) Transistors is investigated. Experiment results show that it can improve the off-state leakage current and reduce the on-state resistance. For hot carrier performance, this structure induces a higher initial current shift due to less vertical field. The long-term hot carrier degradation behavior of this device is the same as that of the standard devices.
Relation:
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA , art. no. 4588212
