A highly stackable Thin-Film Transistor (TFT) NAND-type flash memory

Tunghai University Institutional Repository > 工學院 > 電機工程學系所 > 會議論文 > Item 310901/21726

Please use this identifier to cite or link to this item: http://140.128.103.80:8080/handle/310901/21726

Title:	A highly stackable Thin-Film Transistor (TFT) NAND-type flash memory
Authors:	Lai, E.-K.,?Lue, H.-T.,?Hsiao, Y.-H.,?Hsieh, J.-Y.,?Lee, S.-C.,?Lu, C.-P.,?Wang, S.-Y.,?Yang, L.-W.,?Chen, K.-C.,?Gong, J.,?Hsieh, K.-Y.,?Ku, J.,?Liu, R.,?Lu, C.-Y.
Contributors:	Department of Electrical Engineering, Tunghai University
Keywords:	Energy gap;Flash memory;NAND circuits;Polysilicon
Date:	2006
Issue Date:	2013-05-15T09:04:56Z (UTC)
Abstract:	For the first time, a successful TFT NAND-type Flash memory is demonstrated using a low thermal budget process suitable for stacking the memories. A TFT-SONOS device using bandgap engineered SONOS (BE-SONOS) [1] with fully-depleted (FD) poly silicon (50 nm) channel and tri-gate P +-poly gate is integrated into a NAND array. Small devices (LAV=O. 18/0.09 um) with good DC performance are achieved, owing to the good control capability of the tri-gate FD structure. Successful NAND array functions are demonstrated, with more than 1 μA read current for a 16-string NAND array and good program disturb immunity. This new device also shows good endurance and data retention, and negligible read disturb. These results are very encouraging for future 3D Flash memory. ? 2006 IEEE.
Relation:	Digest of Technical Papers - Symposium on VLSI Technology , art. no. 1705209 , pp. 46-47
Appears in Collections:	[電機工程學系所] 會議論文

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	203	View/Open