Noise measurements were performed on electromigration-damaged single-layer AlSiCu films, that show no resistance change and on multilayer AlSiCu/TiW films that show obvious resistance increase before the samples open. The experimental results showed that single-layer AlSiCu films have 1/ f noise only, and no 1/ 2 noise is observed during the entire stress period. Moreover, the 1/ f noise increases drastically shortly before the samples open. For multilayer samples, 1/ f 2 noise was observed during the stress period, and increased with the stress current density. This result implies that the theory of resistance-drift-induced 1/ f 2 noise is valid in electromigration-damaged metal thin films. ? 1999 Publication Board, Japanese Journal of Applied Physics.
Relation:
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers Volume 38, Issue 1, 1999, Pages 291-292
