A model based on the electromigration-induced resistance change was used to analyze the noise characteristics of aluminum thin-film resistors, and the 1/f2 noise power spectrum was derived theoretically from the rate equation of the resistance change. Experiments were performed on samples stressed with a current density of 1 ? 106 A/cm2 at 125?C for 50 hours. The measured noise indeed showed 1/f2 noise and the results were analyzed quantitatively with the derived model.
Relation:
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers Volume 29, Issue 7, July 1990, Pages 1283-1285
