1/f2 noise spectrum derived from electromigration-induced resistance change

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題名:	1/f2 noise spectrum derived from electromigration-induced resistance change
作者:	Liou, D.M., Gong, J., Chen, C.C.
貢獻者:	Department of Electrical Engineering, Tunghai University
日期:	1990
上傳時間:	2013-05-15T09:11:44Z (UTC)
摘要:	A model based on the electromigration-induced resistance change was used to analyze the noise characteristics of aluminum thin-film resistors, and the 1/f2 noise power spectrum was derived theoretically from the rate equation of the resistance change. Experiments were performed on samples stressed with a current density of 1 ? 106 A/cm2 at 125?C for 50 hours. The measured noise indeed showed 1/f2 noise and the results were analyzed quantitatively with the derived model.
關聯:	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers Volume 29, Issue 7, July 1990, Pages 1283-1285
顯示於類別:	[電機工程學系所] 期刊論文

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