本論文是以奈米柱陣列有良好的光吸收性與抗反射性，而錐狀形貌的結構有著比圓柱狀的結構更大的表面積，這對於合成出太陽光電池能有更好的轉換效率。藉由金屬觸媒催化合成於金屬薄片上成長錐狀矽奈米柱並製備成太陽光電池。 此篇研究藉由金屬觸媒(金/鎵/金)催化合成的方式配合低壓化學沉積系統成長錐狀矽奈米柱，並使用射頻濺鍍系統濺鍍氮化鉭薄膜於不?鋼基板上，利用調變溫度來促使奈米柱達到單晶以及錐狀形貌，並調變製程氣體使錐狀矽奈米柱能形成p-n接面。 從系統性的實驗中發現溫度的提升對於錐狀矽奈米柱的側向成長是有所幫助的，隨著600℃、620℃、630℃不同的溫度，在630℃的形貌藉由高寬比最為接近錐狀形貌；而p型錐狀矽奈米柱結構藉由鎵觸媒的摻雜形成，再透過調變製程氣體-磷化氫來合成p-n接面，而溫度對於n層的厚度也有直接的影響，從600℃、620℃、640℃的實驗當中，在隨著製程溫度的提高對於徑向成長是成正比，從穿透式電子顯微鏡之影像可以發現錐狀矽奈米柱為單晶結構，X光繞射光譜分析於27。為(111)的晶面、46。(220)的晶面，而拉曼光譜分析在520cm-1顯示出其錐狀矽奈米柱為單晶矽的峰值，600℃的p-n接面之錐狀矽奈米柱進行暗電流量測也具有二極體該有的電性。 最後希望在合成出的錐狀矽奈米柱上以原子層沉積技術鍍上一層氧化鋅摻鎵的透明導電膜來製作太陽光電池元件。 In this paper, nanorod array possess the good light absorption properties and antireflection effect, and the tapered structure has more bigger surface area than the bunched structure. Thus, these characteristics are help for enhanced the efficiency in solar cell. So we synthesized tapered silicon nanorods with the metal catalysts on metal substrate.In the study, the tapered silicon nanorods is synthesized with the metal catalysts (gold/gallium/gold) on the stainless steel substrate coated with tantalum nitride by low-temperature chemical vapor deposition system. Changing the synthesis temperature to reach the silicon nanorods be single crystalline and tapered, and changing synthesis process gas (PH3) to fabricate the p-n structure silicon nanorods. The high synthesis temperature is useful to improve the taper morphology in silicon nanorods in the series of experiments. As different temperature of 600℃, 620℃, and 630℃, the tapered silicon nanorods are most apparent in the synthesis temperature of 630℃.The p-type tapered silicon nanorods is fabricated by gallium catalyst doping the gallium, and not only the morphology would be effected, but the thickness of n-type layer would be increased, so with the improvement of synthesis temperature is proportional to the radial growth. In TEM image could find the single crystalline structure of tapered silicon nanorods, and the peak in 27。 is (111) and 46 。 is (220) by XRD. In Raman spectra, the peak of the tapered silicon nanorods at 520cm-1 is single crystal silicon. The tapered silicon nanorods in synthesis temperature of 600℃ would appeare the diode property in Current-Voltage (I-V) Curves. Finally, we’ll use the atomic layer deposition system to deposit Ga-doped Zinc Oxide(GZO) on the tapered silicon nanorods in future, which could be fabricated as the solar cell.
