This paper aims to the research of high voltage lateral insulated gate bipolar transistor (LIGBT) and proposes the design for reducing the substrate leakage current of this device. The junction between LIGBT's p-type substrate and n-epi layer may have a large electrical field and causes the hole current to flow during the turn-on state. To prevent this substrate leakage current, an n-type buried layer (NBL) and a p-type buried layer (PBL) are used. The double reverse biased pn-junction structure effectively reduces the vertical electric field such that the substrate current is reduced by four orders of magnitude. The break down voltage of the LIGBT is not hurt by this added structure at all. ? (2013) Trans Tech Publications, Switzerland.
Relation:
2012 International Conference on Information Technology and Management Innovation, ICITMI 2012 Applied Mechanics and Materials,V.263-266,Issue PART 1,P.60-63
