真空濺鍍混合奈米碳管之氧化物粉體以提升材料介電係數之研究

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Title:	真空濺鍍混合奈米碳管之氧化物粉體以提升材料介電係數之研究
Other Titles:	Study on Vacuum Sputtering of Oxide Powders Mixing with Carbon Nanotubes to Improve the Dielectric Coefficient of Materials
Authors:	張宸瑋 CHEN-WEI, CHANG
Contributors:	劉日新 JIH-HSIN, LIU 電機工程學系
Keywords:	多壁奈米碳管 MWCNTs
Date:	2019
Issue Date:	2019-03-21T09:13:00Z (UTC)
Abstract:	本實驗主要採用兩部分來進行，第一部分是分別使用Al2O3、BaTiO3、Ba0.6Sr0.4TiO3製作粉體靶材來進行射頻磁控濺鍍。由於有論文提出在氧化物材料中摻雜多壁奈米碳管（MWCNTs）後會使原先材料的介電常數有所提升。因此，第二部分則是在Al2O3、BaTiO3、Ba0.6Sr0.4TiO3中加入不同比例（0.5wt%、1wt%、2wt%）的MWCNTs並製作成粉體靶材來進行射頻磁控濺鍍。藉由量測相關參數，可計算出薄膜的介電常數，觀察「混入MWCNTs」這個步驟對於氧化物薄膜之介電常數是否有明顯改變。　　從實驗結果發現，Al2O3＋MWCNTs薄膜在2wt%的MWCNTs摻雜比例且濺鍍條件（100W-3hr）之下，介電常數大約為15.35。其介電常數較未摻雜時提升了約5.97（38.9%）左右。　　BaTiO3＋MWCNTs薄膜在0.25wt%的MWCNTs摻雜比例且濺鍍條件（100W-3hr）之下，介電常數大約為33.18。其介電常數較未摻雜時提升了約5.66（20.5%）左右。然而BaTiO3＋MWCNTs薄膜在MWCNTs的摻雜比例達到0.5wt%時，其介電常數則有開始下降的趨勢。　　Ba0.6Sr0.4TiO3＋MWCNTs在0.5wt%的MWCNTs摻雜比例且濺鍍條件（100W-3hr）之下，介電常數大約為26.19，其介電常數較未摻雜時提升了約4.9（23%）左右。然而Ba0.6Sr0.4TiO3＋MWCNTs薄膜在MWCNTs的摻雜比例達到1wt%時，其介電常數則有開始下降的趨勢。　　This experiment is mainly carried out in two parts, the first part is Al2O3, BaTiO3 and Ba0.6Sr0.4TiO3 were used to make a powder target respectively for RF magnetron sputtering. Due to a previous study suggests that the mixing of multi-walled carbon nanotubes (MWCNTs) in oxide materials will increase the dielectric constant of the original material. Therefore, the second part is to mix MWCNTs of different proportions (0.5wt%, 1wt%, 2wt%) into Al2O3, BaTiO3 and Ba0.6Sr0.4TiO3 and make a powder target respectively for RF magnetron sputtering. By measuring the relevant parameters, the dielectric constant of the thin film can be calculated and is observed whether the step of "mixing into MWCNTs" has a significant change in the dielectric constant of the oxide film.　　From the experimental results that the dielectric constant of Al2O3 + MWCNTs film is around 15.35 under the mixing ratio of 2wt% MWCNTs and the sputtering condition (100W-3hr). Its dielectric constant is around 5.97 (38.9%). It is higher than that of unmixing.　　The dielectric constant of BaTiO3 + MWCNTs film is approximately 33.18 under the mixing ratio of 0.25wt% MWCNTs and the sputtering condition (100W-3hr). Its dielectric constant is around 5.66 (20.5%). It is higher than that of unmixing. However, when the mixing ratio of MWCNTs in the BaTiO3 + MWCNTs mixture reaches 0.5wt%, the dielectric constant of BaTiO3 + MWCNTs film begins to decrease.　　The dielectric constant of Ba0.6Sr0.4TiO3 + MWCNTs film is approximately 26.19 under the mixing ratio of 0.5wt% MWCNTs and the sputtering condition (100W-3hr). Its dielectric constant is around 4.9 (23%). It is higher than that of unmixing. However, when the mixing ratio of MWCNTs in the Ba0.6Sr0.4TiO3 + MWCNTs mixture reaches 1wt%, the dielectric constant of Ba0.6Sr0.4TiO3 + MWCNTs film begins to decrease.
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