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    Master's Theses [108/109]
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    DateTitleAuthors
    2012-06-03 0.18 μm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs Chou, H.-L.,?Su, P.C.,?Ng, J.C.W.,?Wang, P.L.,?Lu, H.T.,?Lee, C.J.,?Syue, W.J.,?Yang, S.Y.,?Tseng, Y.C.,?Cheng, C.C.,?Yao, C.W.,?Liou, R.S.a,?Jong, Y.C.a,?Tsai, J.L.,?Cai, J.,?Tuan, H.C.,?Huang, C.-F.,?Gong, J.
    2008 0.18μm CMOS 2GHz與5GHz頻帶微機電射頻濾波器之研製 陳家豪; Chen Ja Hao
    2009 0.18μm2GHz互補式金氧半射頻開關之研究設計 劉中泰; Liu, Chungn-Tai
    2009 0.18μm5GHz互補式金氧半微機電射頻濾波器之研製 林政筌; Lin, Jeng-Chuan
    1999 The 1/ f noise associated with electromigration in AlSiCu thin films Cheng, Y.a, Gong, J.a, Liou, D.-M.b, Yee, H.
    1988 1/F noise in the linear region of LDD MOSFET's Tsai, Cliff Y.H., Gong, Jeng
    1990 1/f2 noise spectrum derived from electromigration-induced resistance change Liou, D.M., Gong, J., Chen, C.C.
    2013-09-26 A 3.4mW 2.3-to-2.7GHz frequency synthesizer in 0.18-μm CMOS Chang, C.-H.; Yang, C.-Y.; Lee, Y.; Weng, J.-H.; Cheng, N.-C.
    2013-09-04 A 35-GHz frequency synthesizer using frequency doubling and phase rotating technology Yang, C.-Y.; Chang, C.-H.; Weng, J.-H.
    2009 A 5.7-GHz low-noise amplifier with source-degenerated active inductor Chu, C.-H., Huang, I.-L., Lin, Y.-H., Gong, J.

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